MIOMD-IX

J.A. Gupta, P.J. Barrios, J. Lapointe, G.C. Aers, A. Bezinger, P. Waldron, and C. Storey
Institute for Microstructural Sciences, Canada
Single-mode InGaAsSb/AlGaAsSb lasers for gas sensing

W.T. Masselink, M.P. Semtsiv, M. Wienold, M. Chashnikova, and I. Bayrakli ............................................................( invited )
Humboldt University Berlin, Germany
Short-wavelength InP-based QCLs

A. Wittmann, A. Hugi, Y. Bonetti, M. Fischer, E. Gini, and J. Faist Institute of Quantum Electronics, ETH Zürich, Switzerland
High performance single-mode and broadly tunable quantum cascade laser sources

Y. Li, A. Li, L. Wei, H. Li, G. Xu, and Y. Zhang
State Key Laboratory of Functional Materials for Informatics, SIMIT Shanghai,Chinese Academy of Sciences,Shanghai ,China Distributed feedback quantum cascade lasers operating at 420 K

A. Bismuto, T. Gresch, and J. Faist
Institute for Quantum Electronics, ETH-Zürich , Switzerland
Large cavities quantum cascade lasers with InP interstacks

F.K. Tittel, Y. Bakhirkin, R.F. Curl, A. Kosterev, R. Lewicki, D. Thomasz, S. So, and G. Wysocki
Rice Quantum Institute, Rice University, Houston, USA
Recent advances of infrared semiconductor laser based chemical sensing technologies

F. Fuchs, B. Hinkov, Ch. Wild, Q.K. Yang, W. Bronner, K. Köhler, and J. Wagner
Fraunhofer-Institut IAF, Freiburg, Germany
Quantum cascade lasers for imaging backscattering detection of explosives

R. Rehm, M. Walter, J. Schmitz, F. Rutz, J. Fleissner, and J. Ziegler .................................................................( invited )
Fraunhofer-Institut IAF, Freiburg, Germany
QWIP and superlattice dual-band and dual-color FPAs: state of the art and applications

F. Felder, M. Rahim, M. Fill, M. Arnold, H. Zogg, N. Quack, S. Blunier, and J. Dual
Thin Film Physics Group, ETH Zürich, Switzerland
Mid-infrared tunable resonant cavity enhanced detectors

B.A. Matveev, A.L. Zakgeim, N.V. Zotova, N.D. Il'inskaya, S.A. Karandashev, M.A. Remennyy, N.M. Stus, and A.E. Cherniakov
Ioffe Physico-Technical Institute RAS, St. Petersburg, Russia
InAs(Sb) backside illuminated photodiodes and LEDs with deep mesa

A.P. Astakhova, A.M. Monakhov, V.V. Sherstnev, E.A. Grebenshchikova, Y.P. Yakovlev, G. Boissier, R. Teissier, and A.N. Baranov
Physico-Technical Institute RAS, St. Petersburg , Russia Experimental observation of whispering gallery modes in sector cylindrical lasers

L. Xue, S.R.J. Brueck, R. Kaspi, A.P. Ongstad, and G.C. Dente Center for High Technology Materials and ECE Department, University of New Mexico , Albuquerque , USA
Tunable optically pumped mid-IR laser with chirped distributed-feedback grating

A.P. Ongstad, R. Kaspi, G.C. Dente, and M.L. Tilton
Air Force Research Laboratory, Kirtland AFB, Albuquerque , USA Wavelength tuning limitations in optically pumped type-II antimonide lasers

O. Cathabard, J. Devenson, R. Teissier, and A.N. Baranov
IES, Université Montpellier 2, France........................( invited )
InAs quantum cascade lasers

I.P. Marko, A.R. Adams, S.J. Sweeney, R. Teissier, A.N. Baranov, and S. Tomic
Advanced Technology Institute, University of Surrey , Guildford, Surrey , UK
Indirect carrier leakage in short-wavelength InAs/AlSb quantum cascade lasers

B. Grouiez, B. Parvitte, N. Dumelie, L. Joly, and V. Zeninari
Groupe de Spectrom. Moléculaire et Atmonsphérique, UMR CNRS, Reims, France
Quantum cascade laser spectroscopy with intermediate-size pulses: application to NH3 detection in the 10 µm region

M.P. Mikhailova, I.A. Andreev, K.D. Moiseev, E.V. Ivanov, E.A. Grebenschikova, Yu.P. Yakovlev, E. Hulicius, A. Hospodkova, J. Pangrac, K. Melichar, and T. Simecek
A.F. Ioffe Physico-Technical Institute RAS, St. Petersburg , Russia
Mid-infrared photovoltaic detectors based on a type-II p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb heterostructure with deep quantum wells at the interface

S.W. Koch, C. Brückers, A. Thränhardt, J. Hader, and J.V. Moloney................................................................( invited )
Department of Physics and Material Sciences Center ,
Philipps-University Marburg, Germany
Microscopic modelling of long-wavelength laser materials and VECSELs

G. Springholz.........................................................( invited )
Institut of Semiconductor Physics, Johannes Kepler Universität Linz , Austria
IV-VI VCSELs

M. Rattunde*2 , J.-M. Hopkins, N. Schulz, B. Rösener, C. Manz, K. Köhler, D. Burns*1 , and J. Wagner ....................( invited )
*1 Institute of Photonics, University of Strathclyde, Glasgow , UK *2 Fraunhofer-Institut IAF, Freiburg , Germany
High-power GaSb-based optically pumped semiconductor disk laser for the 2.X µm wavelength regime

M. Rahim, F. Felder, M. Fill, D. Boyne, M. Arnold, and H. Zogg
Thin Films Physics Group, ETH Zürich, Switzerland
5 µm vertical external cavity surface emitting lasers grown on BaF2 and Si substrates

J.-M. Hopkins, A.J. Kemp, B. Rösener, N. Schulz, M. Rattunde, J. Wagner, and D. Burns
Institute of Photonics, University of Strathclyde, Glasgow, UK
High-power, pulsed-pumped, 2.0 µm semiconductor disk laser

B. Rösener, N. Schulz, M. Rattunde, R. Moser, C. Manz, K. Köhler, and J. Wagner
Fraunhofer-Institut IAF, Freiburg, Germany
2.25-µm optically pumped semiconductor disk laser using multiple gain elements

Y.G. Zhang, Y. Gu, Z.-B. Tian, K. Wang, Y.-l. Zheng, and A.-Z. Li
State Key Laboratory.............................................( invited )
of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai , China
2.4 ~ 2.7 µm metamorphic InGaAs photodetectors

V.A. Solov`ev, P. J. Carrington, Q. Zhuang, A.A. Sitnikova, S.V. Ivanov, and A. Krier
Department of Physics, Lancaster University, UK
Room-temperature electroluminescence at 3.8 µm from InSb/InAs quantum dot light-emitting diodes

M. Eibelhuber, T. Schwarzl, W. Heiss, and G. Springholz
Institute of Semiconductor Physics, Johannes Kepler University Linz , Austria
Optically pumped mid-infrared IV-VI microdisk lasers operating in continuous-wave at 5.3 microns

M. Eichhorn, M. Rattunde, and J. Wagner
French-German Research Institute ISL, Saint-Louis , France Pulsed GaSb-based laser diodes seeding 2 µm fiber amplifiers

L. Wei, A-z. Li, Y.-g. Zhang, and G.-Y. Xu
State Key Laboratory of Functional Materials for Informatics, Shanghai , China
Thermal management of InAs/AlSb quantum cascade lasers

V.Ya. Aleshkin, A.A. Dubinov, V.I. Gavrilenko, K.V. Maremyanin, S.V. Morozov, A.A. Biryukov, S.M. Nekorkin, B.N. Zvonkov, and Vl.V. Kocharovsky
Inst. of Physics of Microstructures RAS, Nizhny Novgorod, Russia
Intracavity difference-frequency generation in butt-joint diode lasers

J.-M. Hopkins, K. Pierscinski, A.J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. Bugajski, and D. Burns
Institute of Photonics , University of Strathclyde , Glasgow , UK Measurement and modeling of temperature in mid-IR semiconductor disk lasers

N. Hempler, J.-M. Hopkins, B. Rösener, N. Schulz, M. Rattunde, J. Wagner, U.N. Roy, A. Burger, and D. Burns
Institute of Photonics,SUPA,University of Strathclyde,Glasgow, UK Semiconductor disk laser pumped Cr 2+ : Chalcogenide lasers

L.A. Kulakova
Ioffe Physico-Technical Institute RAS, St. Petersburg, Russia
Dynamic fine spectroscopy of heterolaser radiation change under an alternating strain

C.J. Wu, G. Tsai, and H.H. Lin
Graduate Institute of Electronics Engineering and Department of Electrical Engineering,National Taiwan University,Taipei , Taiwan Band alignment of InAsSb/InAsPSb quantum wells

J. Humlicek, K. Navratil, E. Hulicius, J. Vyskocil, T. Simecek, K. Kashani, and M. Amann
Faculty of Science, Masaryk University , Brno , Czech Republic
Mid-infrared optical response of heavily doped GaSb:Te

D.A. Firsov, L.E. Vorobjev, V.L. Zerova, G. Belenky, and L. Shterengas
St. Petersburg State Polytechnic University,St. Petersburg,Russia
Recombination mechanisms in nanostructures with InGaAsSb/InAlGaAsSb quantum wells

A. Fognini, F. Felder, M. Rahim, M. Fill, and H. Zogg
Thin Films Physics Group, ETH Zürich , Switzerland
Self assembled PbTe quantum dots in CdTe on Si(111)

T. Schwarzl , E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano, and W. Heiss
Institute of Semiconductor Physics, Johannes Kepler Universität Linz , Austria
Epitaxial PbTe/CdTe quantum dots for the mid-infrared: Temperature dependent photoluminescence and calculation of the corresponding transition energy

M. Hübner and J. Röpcke
INP Greifswald, Germany
IR-spectroscopy studies of volatile organic compound destructions using a multi-stage plasma reactor

V. Spagnolo, A. Elia, C. Di Franco, P.M. Lugara, and G.
Scamarcio
CNR-INMF LIT and Dipartimento Interateneo di Fiscia, Politecnicio di Bari, Italy
Optoacoustic detection of formaldehyde using quantum cascade lasers